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Photovoltaic Performance Enhancement of All‐Inorganic CsPbBr 3 Perovskite Solar Cells Using In 2 S 3 as Electron Transport Layer via Facile Reflux‐Condensation Process
Author(s) -
Huang Caiyou,
Chen Jianlin,
Liu Zhuang,
Chen Shu,
Qiu Wei,
Liu Chang,
Peng Zhuoyin,
Chen Jian
Publication year - 2021
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202000665
Subject(s) - materials science , optoelectronics , perovskite (structure) , energy conversion efficiency , band gap , perovskite solar cell , electron mobility , photovoltaic system , short circuit , indium tin oxide , nanotechnology , layer (electronics) , voltage , chemical engineering , electrical engineering , engineering
All‐inorganic perovskite solar cells (PSCs) have attracted tremendous attention over the past few years owing to their outstanding thermal and moiture stability. Electron transport layers (ETLs) in PSCs play a prominent role of electron extraction and transportation as well as hole blocking for a high power conversion efficiency (PCE). Indium sulfide (In 2 S 3 ) films have been introduced as a promising ETL of PSCs recently due to their high carrier mobility, appropriate band gap, and controllable electrical characteristics. Herein, a facile wet chemistry method is proposed to prepare In 2 S 3 films for the ETLs of all‐inorganic CsPbBr 3 PSCs with an architecture of fluorine‐doped tin oxide/In 2 S 3 /CsPbBr 3 /carbon. The resultant compact In 2 S 3 films show a certain visible light absorption with a bandgap of 2.51 eV. With the optimal 3000 rpm speed of In 2 S 3 spin‐coating, the best‐performing In 2 S 3 based device presents a higher champion PCE of 5.83% with open circuit voltage of 1.34 V, a short circuit current density of 6.74 mA cm −2 and a fill factor of 0.65. The better performance of devices based on In 2 S 3 ETLs is attributed to their more suitable energy level matching with less open circuit voltage loss, better light harvesting, and electron extraction capability enhancement.