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Hafnium Oxide‐Based Ferroelectric Devices for Computing‐in‐Memory Applications
Author(s) -
Chen Pei-Yao,
He Zheng-Yu,
Cha Ming-Yang,
Liu Hao,
Zhu Hao,
Chen Lin,
Sun Qing-Qing,
Ding Shi-Jin,
Zhang David Wei
Publication year - 2021
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202000635
Subject(s) - non volatile memory , ferroelectricity , materials science , computer science , optoelectronics , capacitor , memory cell , logic gate , electronic engineering , electrical engineering , dielectric , voltage , engineering , transistor , algorithm
Herein, a layer of 10 nm ferroelectric Al‐doped HfO 2 (HAO) film is fabricated and optimized and is further integrated in a nonvolatile memory device with TiN/HAO/Pt/Ti capacitor structure. Long retention, high endurance, and stable storage characteristics, as well as a competitive residual polarization of 2Pr = 24–30 μC cm −2 are achieved. Furthermore, computing‐in‐memory applications are implemented utilizing the HAO‐based ferroelectric memory devices. Typical NOR and NOT logic gates are obtained based on the memristor‐aided logic (MAGIC) operations by exploiting the polarization inversion characteristics of the device, which show great potential in realizing other basic Boolean logic operations. The results show that the HAO‐based ferroelectric memory device is a strong candidate in the pursuit of next‐generation parallel storage and computing systems.