Premium
Characterization of Ultrathin Fully Depleted Silicon‐on‐Insulator Devices Using Subthreshold Slope Method
Author(s) -
Mchedlidze Teimuraz,
Erben Elke
Publication year - 2020
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202000625
Subject(s) - subthreshold conduction , subthreshold slope , materials science , optoelectronics , silicon , insulator (electricity) , silicon on insulator , transistor , characterization (materials science) , dielectric , threshold voltage , interface (matter) , voltage , electrical engineering , nanotechnology , engineering , capillary action , composite material , capillary number
The subthreshold current–voltage (subthreshold slope) characteristic of a fully depleted silicon‐on‐insulator high‐ k dielectric‐metal gate field‐effect transistor is applied for evaluation of the interface traps located at both the front and back channels. The proposed characterization method allows an estimation of averaged trap densities separately for the front and back interfaces of the channel. Performing subthreshold slope measurements at several temperatures allows the extraction of the energy distributions of the interface trap densities for both interfaces and obtaining essential characteristics of the stack.