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Effect of Zr Addition on Threshold Switching Characteristics of Amorphous Ga 2 Te 3 Thin Films
Author(s) -
Lee Dayoon,
Kim Taeho,
Kim Jaeyeon,
Sohn Hyunchul
Publication year - 2020
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202000623
Subject(s) - materials science , amorphous solid , doping , threshold voltage , thin film , optoelectronics , thermal stability , voltage , current density , nanotechnology , electrical engineering , chemical engineering , crystallography , transistor , chemistry , physics , quantum mechanics , engineering
A cross‐point array structure is a promising structure in high‐density memory applications. However, a cross‐point array has sneak current paths from selected cells to neighboring unselected cells, and a selector device is required to suppress the sneak current issue. Therefore, the capability of modulating the threshold voltage is one of the essential elements facilitating reliable operation of the cross‐point array structure. Herein, the effect of Zr doping on the threshold switching properties of amorphous Ga 2 Te 3 (a‐Ga 2 Te 3 ) thin films is investigated with optical and electrical properties and the thermal stability of amorphous phase. Zr‐doped a‐Ga 2 Te 3 thin films increase the threshold and holding voltages with improved thermal stability. Moreover, Zr doping reduces the leakage current of the Ga 2 Te 3 selector device, which is beneficial to implement the cross‐point array of high density. Regarding the endurance, Zr‐doped a‐Ga 2 Te 3 thin films show stable operation until 10 9 cycles.