Premium
Impact of E‐Mode Gallium Nitride High Electron Mobility Transistor with P‐Type Gate on Waveform Distortion in an AirFuel Wireless Power Transfer System
Author(s) -
Sun Shaoyu,
Zhang Jianshan,
Xia Ling,
Wu Wengang,
Wang Jinyan,
Jin Yufeng
Publication year - 2021
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202000565
Subject(s) - high electron mobility transistor , waveform , gallium nitride , materials science , transistor , optoelectronics , nanosecond , distortion (music) , electrical engineering , power semiconductor device , linearity , voltage , electronic engineering , topology (electrical circuits) , physics , amplifier , engineering , cmos , nanotechnology , optics , laser , layer (electronics)
A wireless power transfer system using commercial lateral gallium nitride (GaN)‐based high electron mobility transistor (HEMT) is studied. Waveform distortions from an ideal class‐D zero‐voltage switching topology are observed. A special method is presented to accurately measure the dynamic resistance in the nanosecond scale. The origin of distortions is traced back to both the circuit and device levels. The receiver‐side condition and dynamic ON resistance of the GaN devices, as well as the thermal effects are responsible for the waveform distortion. The severity of deterioration of the GaN device is influenced by the circuit performance. Herein, the influence of the nonideal effects of the device on the system under different working conditions is studied. It is found that such influence can be reduced by adjusting the circuit design.