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Facile Approach for Improving Synaptic Modulation of Analog Resistive Characteristics by Embedding Oxygen Vacancies‐Rich Sub‐TaO x in Pt/Ta 2 O 5 /Ti Device Stacks
Author(s) -
Jin Soeun,
Lee Donguk,
Kwak Myonghoon,
Kim Ah Ra,
Hwang Hyunsang,
Cheon Hyuknyeong,
Kwon Jung-Dae,
Kim Yonghun
Publication year - 2021
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202000534
Subject(s) - neuromorphic engineering , synaptic weight , materials science , atomic layer deposition , oxygen , nanoclusters , optoelectronics , nanotechnology , layer (electronics) , analytical chemistry (journal) , chemistry , computer science , organic chemistry , chromatography , machine learning , artificial neural network
Herein, a Ta 2 O 5 ‐based resistive synaptic device with high symmetricity and enhanced switching ratio is successfully obtained by the formation of sub‐TaO x with enriched oxygen vacancies into Ta 2 O 5 switching layers. The concentration of Ta nanoclusters in Ta 2 O 5 can be precisely controlled using plasma‐enhanced atomic layer deposition (PE‐ALD), where the number of cycles is varied from 5 to 20 cycles with steps of five cycles. The as‐fabricated Ta 2 O 5 resistive synaptic device containing Ta deposited using five cycles exhibits increased switching window and switching current. As a result, the linearity of potentiation/depression improves significantly from 13.53/−16.83 to 4.45/−1.38 by applying successive programing pulses, indicating that the recognition accuracy of the Mixed National Institute of Standards and Technology pattern is increased by 11.45% compared with the pristine device. It is considered that the introduction of an optimal number of Ta deposition cycles can effectively control the porosity of the Ta 2 O 5 layer, resulting in an increase in the movement of oxygen ions and analog switching behavior. Thus, a facile PE‐ALD technique can be applied to demonstrate highly reliable analog synaptic devices for neuromorphic hardware systems.