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The Doping of Si p‐Field‐Effect Transistor Devices by Gallium Focused Ion Beam Implantation Enabling Flexible Fabrication Routes at Moderate Temperatures
Author(s) -
Winkler Felix,
Strobel Carsten,
Wenzel Christian,
Bartha Johann W.
Publication year - 2021
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202000511
Subject(s) - materials science , optoelectronics , diode , wafer , fabrication , focused ion beam , doping , gallium , field effect transistor , ion implantation , transistor , nanotechnology , quantum tunnelling , ion , electrical engineering , chemistry , voltage , medicine , alternative medicine , organic chemistry , pathology , metallurgy , engineering
A maskless approach of forming p‐doped regions in Si wafers using the Ga source of a standard focused ion beam (FIB) system and the moderate activation temperatures of 400–700 °C is demonstrated in this work. This simple and flexible route is accessible to many research labs and is successfully used to fabricate Si‐based diodes and field‐effect transistors (FETs). For the diodes, tunneling is found to be the forward current transport mechanism. The fabricated p‐FET structures show excellent switching behavior with a high I D,ON /I D,OFF current ratio of 5 × 10 6 .