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Fabrication of n‐Type Doped V‐Shaped Structures on (100) Diamond
Author(s) -
Schreyvogel Christoph,
Temgoua Solange,
Giese Christian,
Cimalla Volker,
Barjon Julien,
Nebel Christoph. E.
Publication year - 2021
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202000502
Subject(s) - materials science , doping , diamond , cathodoluminescence , fabrication , optoelectronics , annealing (glass) , schottky barrier , etching (microfabrication) , schottky diode , diode , nanotechnology , composite material , medicine , alternative medicine , pathology , layer (electronics) , luminescence
Herein, a technological process for the fabrication of n‐type doped V‐shaped structures on (100) single‐crystalline diamond substrates, designed to overcome the limitations of n‐type doping on (100) surfaces, is presented. This doping enhancement process can be applied to realize electronic power devices such as a junction barrier Schottky diode or junction field effect transistors with low on‐resistance. Herein, a catalytic etching process is performed by using square‐shaped nickel masks on the diamond surface and annealing in a hydrogen atmosphere, resulting in the formation of inverted pyramidal structures with flat {111} sidewalls. The resulting V‐shaped structures are subsequently overgrown with phosphorus‐doped diamond to achieve n‐type doped facets with higher doping concentrations. Cathodoluminescence studies reveal the predominant incorporation of phosphorus donors on the {111} sidewalls of V‐shaped structures.