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Enhancing the Diode Characteristics of Pulsed Laser–Deposited n‐Mg x Zn 1− x O/p‐Si Heterojunction: Role of Oxygen Ambient Pressure
Author(s) -
Chetia Shantanu Kaushik,
Das Amit Kumar,
Ajimsha Rohini Shreedharan,
Sahu Vikas Kumar,
Misra Pankaj
Publication year - 2020
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202000440
Subject(s) - heterojunction , oxygen , diode , analytical chemistry (journal) , materials science , pulsed laser deposition , rectification , ambient pressure , saturation current , saturation (graph theory) , thin film , optoelectronics , chemistry , nanotechnology , voltage , physics , mathematics , chromatography , quantum mechanics , combinatorics , thermodynamics , organic chemistry
Herein, diode characteristics of n‐Mg x Zn 1 − x O/p‐Si heterojunctions grown by pulsed laser deposition at different oxygen ambient pressures are investigated. It is found that the heterojunctions grown at lower oxygen growth pressure of 1.0 × 10 −2 mbar and below do not show rectifying diode‐like behavior, whereas those grown at higher oxygen pressures at and above 2.5 × 10 −2 mbar exhibit perfect diode‐like rectifying characteristics. The diode characteristics are found to improve significantly with increasing oxygen ambient pressure during the growth of Mg x Zn 1 − x O film. The current–voltage measurements show that the n‐Mg x Zn 1 − x O/p‐Si heterojunction diode grown at a higher oxygen ambient pressure of ≈1.0 × 10 −1 mbar has the lowest reverse saturation current of ≈19 nA and highest rectification ratio of ≈1.4 × 10 4 . The capacitance–voltage measurements reveal that the depletion layer width of heterojunction diodes increases manifold with increasing oxygen ambient pressure during the growth of Mg x Zn 1 − x O, which is understood in terms of decrease in carrier concentrations in the Mg x Zn 1 − x O thin films grown at higher oxygen ambient pressures. The n‐Mg x Zn 1 − x O/p‐Si heterojunction diodes, grown at high oxygen ambient pressures, with low reverse saturation current, high rectification ratio, and large depletion width may have potential application in wide‐bandgap nanoelectronic devices and UV enhanced photodetectors.