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Spectral Responsivity Characteristics of Front‐Side Illumination InGaAs PhotoFETs on Si
Author(s) -
Oishi Kazuaki,
Ishii Hiroyuki,
Chang Wen Hsin,
Ishii Hiroto,
Endoh Akira,
Fujishiro Hiroki,
Maeda Tatsuro
Publication year - 2021
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202000439
Subject(s) - responsivity , optoelectronics , photocurrent , materials science , photodetector , wafer , optics , photodiode , physics
InGaAs photo field‐effect transistor (photoFET) on Si is the most promising candidate for a high responsivity shortwave infrared (SWIR) photodetector toward monolithic integration with Si‐LSI. To evaluate spectral responsivity characteristics of front‐side illumination (FSI) InGaAs photoFETs integrated on Si wafer, the photocurrent measurement system with a wide area SWIR illumination is developed. This allows us to extract more accurate incident power density illuminating on the whole sensing area. From the incident power dependence of the responsivity, the spectral responsivity characteristics at a constant incident power are derived. It is found that the spectral responsivity characteristics of InGaAs photoFETs on Si present higher and broader responsivity than that of InGaAs photodiode.