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Tailorable Dielectric Performance of Niobium‐Modified Poly(hydridomethylsiloxane) Precursor‐Derived Ceramic Nanocomposites
Author(s) -
Thiyagarajan Ganesh Babu,
Koroleva Ekaterina,
Filimonov Alexey,
Vakhrushev Sergey,
Kumar Ravi
Publication year - 2020
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202000417
Subject(s) - materials science , ceramic , amorphous solid , nanocrystalline material , nanocomposite , dielectric , permittivity , crystallization , composite material , dielectric loss , chemical engineering , nanotechnology , crystallography , optoelectronics , chemistry , engineering
The low‐frequency dielectric behavior of in situ crystallized and stabilized nanocrystalline t‐ NbO 2 in amorphous silicon oxycarbide (SiOC) ceramic nanocomposites derived from niobium‐modified poly(hydridomethylsiloxane) (PHMS) is reported. Commercially available PHMS is modified using Nb(OC 2 H 5 ) 5 via chemical and mechanical mixing route. It is observed that the synthesis route and heat‐treatment temperatures significantly affect the crystallization of the ceramic phases, where c‐ NbC and t‐ NbO 2 in amorphous SiOC are formed through chemical and mechanical modification route, respectively. The variation in dielectric permittivity and loss at room temperature with respect to ceramic phases is comprehensively investigated. In contrast to amorphous SiOC ceramics derived from PHMS ( ε ′ = 100.0 at 1 Hz), t‐ NbO 2 in amorphous SiOC ceramic exhibits colossal dielectric permittivity ( ε ′ = 5.0 × 10 5 at 1 Hz) with low loss (tan δ < 3.0). This is attributed to an interfacial charge polarization and in situ growth of insulator/semiconductor/insulator ceramic phases in amorphous SiOC ceramic nanocomposites.