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First Demonstration of a High‐Speed and High‐Power‐Tolerance InGaAs/Si Photodiode Fabricated by Atomic Diffusion Bonding
Author(s) -
Yamada Yuki,
Nada Masahiro,
Uomoto Miyuki,
Shimatsu Takehito,
Nakajima Fumito,
Matsuzaki Hideaki
Publication year - 2021
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202000395
Subject(s) - responsivity , photocurrent , materials science , photodiode , optoelectronics , diffusion , substrate (aquarium) , photodetector , physics , thermodynamics , oceanography , geology
A novel high‐speed photodiode (PD) with an InGaAs/Si structure fabricated by atomic‐diffusion bonding (ADB) is proposed with the aim of improving the heat transfer. The fabricated PD shows a responsivity of 0.42 A W −1 and a 3 dB bandwidth of over 50 GHz. The maximum damage‐threshold photocurrent, or high‐power tolerance, is higher than that of a conventional PD on an InP substrate, thanks to the high thermal conductivity of Si used as the collector in the PD.