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Spatial Atomic Layer Deposition of Aluminum Oxide as a Passivating Hole Contact for Silicon Solar Cells
Author(s) -
Öğütman Kortan,
Iqbal Nafis,
Gregory Geoffrey,
Li Mengjie,
Haslinger Michael,
Cornagliotti Emanuele,
Schoenfeld Winston V.,
John Joachim,
Davis Kristopher O.
Publication year - 2020
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202000348
Subject(s) - passivation , materials science , atomic layer deposition , boron , wafer , silicon , common emitter , saturation current , aluminium , optoelectronics , oxide , layer (electronics) , doping , nanotechnology , metallurgy , chemistry , electrical engineering , organic chemistry , engineering , voltage
Herein, tunneling aluminum oxide (Al 2 O 3 ) passivation layers are demonstrated to be a candidate for hole collecting, passivating contacts when coupled with a boron‐doped surface. These very thin Al 2 O 3 films (1.5–3 nm) are deposited using spatial atomic layer deposition (ALD) on boron diffused (110–115 Ω □ −1 ) hydrophilic surfaces operating as metal–insulator–semiconductor (MIS) contacts. The emitter saturation current density values of ≈57 fA cm −2 are achieved for the Al 2 O 3 film thicknesses of 2 nm before metallization. At this same thickness, the contact resistivity values of 33 mΩ cm 2 are obtained after metallization. Most importantly, the boron diffusion, wet chemical surface preparation, and spatial ALD of Al 2 O 3 used to create these MIS structures are all performed with industrially relevant equipment on Cz wafers.