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Piezoelectric Properties of Zinc Oxide Thin Films Grown by Plasma‐Enhanced Atomic Layer Deposition
Author(s) -
Abu Ali Taher,
Pilz Julian,
Schäffner Philipp,
Kratzer Markus,
Teichert Christian,
Stadlober Barbara,
Coclite Anna Maria
Publication year - 2020
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202000319
Subject(s) - materials science , atomic layer deposition , thin film , substrate (aquarium) , piezoelectricity , layer (electronics) , zinc , deposition (geology) , analytical chemistry (journal) , chemical engineering , nanotechnology , composite material , metallurgy , chemistry , organic chemistry , paleontology , oceanography , sediment , engineering , biology , geology
Zinc oxide (ZnO) thin films are deposited by plasma‐enhanced atomic layer deposition (PE‐ALD). This deposition method allows depositing stoichiometric and highly resistive ZnO films at room temperature. Despite such important requirements for piezoelectricity being met, not much is known in literature about the piezoelectric properties of ZnO thin films (<70 nm) deposited by PE‐ALD. The films are grown at different substrate temperatures to investigate the effect on crystalline and piezoelectric properties. Films deposited on flexible poly(ethylene terephthalate) (PET) generated a higher piezoelectric current (>1.8 nA) and charge (>80 pC) compared with films deposited on glass (>0.3 nA and >30 pC) due to bending effects of the substrate when mechanically excited. Furthermore, increasing the substrate temperature, during deposition, enhances the growth along the (002) crystallographic orientation, which further strengthens the generated piezoelectric current signal for mechanical excitations along the ZnO film's c ‐axis.