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High‐Performance Broadband Tungsten Disulfide Photodetector Decorated with Indium Arsenide Nanoislands
Author(s) -
Yang Yuekun,
Liu Guanyu,
Li Panlin,
Zhang Miao,
Wang Jianlu,
Hu Weida,
Xue Zhongying,
Di Zengfeng
Publication year - 2020
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202000297
Subject(s) - photodetection , materials science , photodetector , photocurrent , optoelectronics , indium arsenide , tungsten disulfide , heterojunction , indium , gallium arsenide , indium gallium arsenide , monolayer , tungsten , nanotechnology , metallurgy
The 2D tungsten disulfide (WS 2 ), as a typical transition metal dichalcogenide (TMD), has aroused intense research interests in photodetection. However, the limited detection wavelength ranges and low photoresponsivity hinder its further application. To promote the application of WS 2 in optoelectronics fields, indium arsenide (InAs) nanoislands decorated WS 2 are utilized to fabricate photodetectors in this work. Owing to the photogating effect and localized surface plasmon resonance (LSPR), a significant enhancement of photocurrent response (≈1 mA W −1 ) is obtained by coupling WS 2 with InAs nanoislands. Furthermore, the extended detection wavelength up to 1060 nm is realized due to the efficient light absorption in IR range of InAs nanoislands. The high performance, stability, and reliability in ambient temperature strongly indicate that the InAs nanoislands/WS 2 heterostructure can be considered as a promising material for TMDs‐based broadband optoelectronic devices in the future.