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Wake‐Up Mechanisms in Ferroelectric Lanthanum‐Doped Hf 0.5 Zr 0.5 O 2 Thin Films
Author(s) -
Mehmood Furqan,
Mikolajick Thomas,
Schroeder Uwe
Publication year - 2020
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202000281
Subject(s) - ferroelectricity , materials science , hafnium , doping , capacitor , optoelectronics , zirconium , thin film , temperature cycling , lanthanum , nanotechnology , electrical engineering , dielectric , thermal , inorganic chemistry , metallurgy , voltage , chemistry , meteorology , engineering , physics
Since the discovery of ferroelectricity in thin doped hafnium oxide layers, there is a rapidly growing interest in the implementation of this material into nonvolatile memory devices such as ferroelectric capacitors, transistors, or tunnel junctions. In most cases, a field‐cycling‐induced change in the remanent polarization is attributed to wake‐up and fatigue in ferroelectric HfO 2 devices. The lanthanum‐doped hafnium/zirconium mixed oxide system is of broad interest due to its high endurance stability and low crystallization temperature which is necessary for low thermal budget, back‐end of line devices. Herein, a detailed temperature‐dependent field‐cycling study is performed in a wide temperature range from liquid nitrogen to room temperature to separate field‐cycling‐induced charge movements from phase change effects. Results are expected to be relevant for similar doped HfO 2 ferroelectric layers.