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Artificial Synapse Based on Back‐Gated MoS 2 Field‐Effect Transistor with High‐ k Ta 2 O 5 Dielectrics
Author(s) -
Mohta Neha,
Mech Roop K.,
Sanjay Sooraj,
Muralidharan R.,
Nath Digbijoy N.
Publication year - 2020
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202000254
Subject(s) - materials science , excitatory postsynaptic potential , synapse , long term potentiation , transistor , postsynaptic potential , gate dielectric , optoelectronics , postsynaptic current , synaptic plasticity , conductance , field effect transistor , inhibitory postsynaptic potential , neuroscience , electrical engineering , voltage , chemistry , physics , biology , condensed matter physics , biochemistry , receptor , engineering
Herein, a multilayer MoS 2 ‐based low‐power synaptic transistor using Ta 2 O 5 as a back‐gate dielectric for mimicking the biological neuronal synapse is reported. The use of high‐ k dielectric allows for a lower‐voltage swing compared with using conventional SiO 2 , thus offering an attractive route to low‐power synaptic device architectures. Exfoliated MoS 2 is utilized as the channel material, and the hysteresis in the transfer characteristics of the transistor is exploited to demonstrate excitatory and inhibitory postsynaptic currents, long‐term potentiation, and long‐term depression (LTP/LTD), indirect spike timing‐dependent plasticity (STDP) based on single and sequential gate ( V g ) pulses, respectively. The synapse had achieved a 35% weight change in channel conductance within 15 electrical pulses for negative synaptic gate pulse and 28% change for positive synaptic gate pulse. A complete tunability of weight in the synapse by spike amplitude‐dependent plasticity (SADP) at a low voltage of 4 V is also demonstrated.