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Study of SiO 2 Etching Processing with CH 4 /SF 6 Plasmas
Author(s) -
Man Xu,
Bao Ni,
Hao Yongqin,
Feng Yuan,
Ma Xiaohui
Publication year - 2020
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202000223
Subject(s) - etching (microfabrication) , sputtering , layer (electronics) , photoresist , inductively coupled plasma , plasma , analytical chemistry (journal) , materials science , ion , plasma etching , reactive ion etching , silicon , silicon dioxide , steady state (chemistry) , thin film , chemistry , nanotechnology , optoelectronics , composite material , physics , organic chemistry , quantum mechanics , chromatography
Silicon dioxide (SiO 2 ) layers using photoresist (PR) masks are etched by inductively coupled plasma in CH 4 /SF 6 under various etching conditions. A thin CH x F y polymer layer which exists on the surface of sample during steady‐state etching is observed. The steady‐state CH x F y layer reduces the physical sputtering of ions, resulting in the etching rate of PR decreases significantly. Although the high‐density plasmas can enhance the physical sputtering to some extent and give SiO 2 more opportunities to react with fluorine atoms, it is helpful to improve the etching rate of SiO 2 . By optimizing process conditions, the thickness of the steady‐state CH x F y layer and the density of ions are regulated, and a reasonable selective etching is obtained.