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Indium Localization‐Induced Red, Green, and Blue Emissions of Semipolar (11‐22) GaN‐Based Light‐Emitting Diodes
Author(s) -
Choi Jun-Ho,
Baek Seung-Hye,
Kim Hee-Wung,
Na Hyunseok,
Lee Sung-Nam
Publication year - 2020
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202000219
Subject(s) - electroluminescence , materials science , indium , light emitting diode , optoelectronics , diode , hexagonal crystal system , blueshift , epitaxy , wavelength , full width at half maximum , green light , blue light , crystallography , nanotechnology , chemistry , photoluminescence , layer (electronics)
Red, green, and blue electroluminescence (EL) in semipolar (11‐22) GaN‐based light‐emitting diodes (LEDs) is achieved using SiO 2 hexagonal patterns epitaxial lateral overgrowth (HP‐ELO). The size, density, and area of arrowhead‐like surface structure of the semipolar (11‐22) HP‐ELO GaN are significantly affected by increasing the SiO 2 hexagonal patterns from 6.0 to 15.0 μm. The full width at half maximum and the blueshift wavelength of EL spectra increases with increasing from 6.0 to 9.0 μm, and then decreases with increasing the hexagonal pattern width to 15.0 μm. These results show a similar tendency to the surface area of arrowhead‐like structure. In addition, micro‐EL images show that indium localization‐induced low energy emission initiates at the front end of arrowhead‐like pattern, and then blueshifted emissions propagate to the side edges as the injection current increases. Therefore, it suggests that HP‐ELO can control the arrowhead‐like surface structure composed of different indium compositions, which can achieve red, green, and blue emissions of a semipolar (11‐22) HP‐ELO GaN‐based LED.