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Improving the Current‐Spreading Effect for GaN‐Based Quasi‐Vertical PIN Diode by Using an Embedded PN Junction
Author(s) -
Liu Yajin,
Jia Xingyu,
Zhang Yonghui,
Zhang Zi-Hui
Publication year - 2020
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202000146
Subject(s) - diode , optoelectronics , materials science , current crowding , electrode , sapphire , pin diode , current (fluid) , breakdown voltage , p–n junction , electric field , voltage , light emitting diode , electrical engineering , optics , chemistry , physics , semiconductor , engineering , laser , quantum mechanics
GaN‐based quasi‐vertical PIN diodes are grown on insulating sapphire substrates, and thus both the n‐electrode and the p‐electrode are made on the same side, which causes lateral current injection scheme. Therefore, one of the challenge s for this design lies in the serious current crowding at the mesa edges, which leads to the local hole accumulation, and thus the Auger recombination significantly gives rise to the poor conductivity modulation in the drift region when the devices are forwardly biased. Herein, utilizing an embedded PN–GaN junction is proposed, such that the embedded PN–GaN junction is reversely biased when the PIN diode is in the on‐state condition. The built‐in electric field in the reversely biased PN–GaN junction depletes holes at the mesa edges, and correspondingly the Auger recombination can be decreased. The results also show that the proposed structures do not affect the breakdown voltage for PIN diodes.