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Directing the Morphology of Chemical Vapor Deposition‐Grown MoS 2 on Sapphire by Crystal Plane Selection
Author(s) -
Peters Lisanne,
Ó Coileáin Cormac,
Dluzynski Patryk,
Siris Rita,
Duesberg Georg S.,
McEvoy Niall
Publication year - 2020
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202000073
Subject(s) - sapphire , chemical vapor deposition , epitaxy , van der waals force , materials science , photoluminescence , raman spectroscopy , metalorganic vapour phase epitaxy , crystal (programming language) , substrate (aquarium) , nanotechnology , crystal growth , crystallography , chemical engineering , optoelectronics , chemical physics , chemistry , optics , layer (electronics) , physics , molecule , laser , organic chemistry , oceanography , engineering , geology , computer science , programming language
Crystalline substrates are known to function as a template for the growth of Van der Waals materials. Van der Waals materials, specifically transition metal dichalcogenides, have gained attention in the past decade due to their interesting chemical and physical properties, as well as the potential they hold for applications, particularly in the field of (opto‐)electronics. The crystalline quality of these materials can be improved by epitaxial growth. Herein, the influence substrate selection has on ordering the growth of MoS 2 is examined. Specifically, the impact sapphire crystal orientation has on the morphology and alignment of MoS 2 grown by chemical vapor deposition is investigated. C‐plane ( 0001 ) , R‐plane ( 1 1 ¯ 02 ) , A‐plane ( 11 2 ¯ 0 ) , and M‐plane ( 10 1 ¯ 0 ) Al 2 O 3 substrates, annealed at high temperature in air, are used as templates for MoS 2 growth. Comparative analysis, including photoluminescence spectroscopy, Raman spectroscopy, and atomic force microscopy, reveals distinct characteristics and growth modes depending on the growth substrate used. It is found that aligned growth of MoS 2 is influenced by the terrace size, atomic steps, and substrate interaction with the MoS 2 . Aligned growth occurs on both R‐ and M‐plane sapphire. For A‐plane sapphire, the MoS 2 flakes are variable in size and thickness. The weakest substrate interaction is observed for growth on C‐plane sapphire, which consists of randomly oriented flakes.