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Theoretical Study on InAlAs/InGaAs Single‐Photon Avalanche Detectors with Self‐Feedback
Author(s) -
Liu Guipeng,
Tang Jinjin,
Wang Xin,
Zhao Jingze,
Song Yafeng,
Zhao Guijuan,
Yang Jianhong
Publication year - 2020
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202000053
Subject(s) - voltage , detector , optoelectronics , avalanche diode , materials science , quenching (fluorescence) , single photon avalanche diode , photon , breakdown voltage , physics , avalanche photodiode , optics , fluorescence , quantum mechanics
The self‐quenching and self‐recovery process of the InAlAs/InGaAs single‐photon avalanche detector (SPAD) is demonstrated, during which the percentage of overbias voltage increases from 1% to 10%. The results show that the overbias voltage has a significant impact on the performance of SPAD. It is found that when the percentage of overbias voltage increases from 2% to 10%, both the trigger time and the quench time decrease, whereas the recovery time decreases first and reaches a minimum when the percentage of overbias voltage is 5%, and then increases. It is also clarified the specific mechanism that the device loses its self‐feedback capability when the percentage of overbias voltage is less than 1%.