Theoretical Study on InAlAs/InGaAs Single‐Photon Avalanche Detectors with Self‐Feedback | Zendy

Liu Guipeng | Zendy; Tang Jinjin | Zendy; Wang Xin | Zendy; Zhao Jingze | Zendy; Song Yafeng | Zendy; Zhao Guijuan | Zendy; Yang Jianhong | Zendy

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Theoretical Study on InAlAs/InGaAs Single‐Photon Avalanche Detectors with Self‐Feedback

Author(s) -

Liu Guipeng,

Tang Jinjin,

Wang Xin,

Zhao Jingze,

Song Yafeng,

Zhao Guijuan,

Yang Jianhong

Publication year - 2020

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.202000053

Subject(s) - voltage , detector , optoelectronics , avalanche diode , materials science , quenching (fluorescence) , single photon avalanche diode , photon , breakdown voltage , physics , avalanche photodiode , optics , fluorescence , quantum mechanics

The self‐quenching and self‐recovery process of the InAlAs/InGaAs single‐photon avalanche detector (SPAD) is demonstrated, during which the percentage of overbias voltage increases from 1% to 10%. The results show that the overbias voltage has a significant impact on the performance of SPAD. It is found that when the percentage of overbias voltage increases from 2% to 10%, both the trigger time and the quench time decrease, whereas the recovery time decreases first and reaches a minimum when the percentage of overbias voltage is 5%, and then increases. It is also clarified the specific mechanism that the device loses its self‐feedback capability when the percentage of overbias voltage is less than 1%.

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