Nanogranular Cadmium Sulfoselenide Thin Films Grown by Successive Ionic Layer Adsorption and Reaction Method for Optoelectronic Applications | Zendy

Bhat Tejasvinee S. | Zendy; Mali Sawanta S. | Zendy; Patil Jyoti V. | Zendy; Killedar Shirish T. | Zendy; Desai Trishala R. | Zendy; Patil Ashwinee N. | Zendy; Hong Chang Kook | Zendy; Dongale Tukaram D. | Zendy; Patil Pramod S. | Zendy

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Nanogranular Cadmium Sulfoselenide Thin Films Grown by Successive Ionic Layer Adsorption and Reaction Method for Optoelectronic Applications

Author(s) -

Bhat Tejasvinee S.,

Mali Sawanta S.,

Patil Jyoti V.,

Killedar Shirish T.,

Desai Trishala R.,

Patil Ashwinee N.,

Hong Chang Kook,

Dongale Tukaram D.,

Patil Pramod S.

Publication year - 2020

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.202000002

Subject(s) - nanocrystalline material , materials science , thin film , layer (electronics) , chemical engineering , ionic bonding , optoelectronics , adsorption , diffraction , energy conversion efficiency , nanotechnology , optics , ion , chemistry , physics , organic chemistry , engineering

A bottom‐up, simple, and promising successive ionic layer adsorption and reaction (SILAR) method is used to synthesize cadmium sulfoselenide (CdS x Se 1– x ) thin films. The structural, morphological, and optical properties of the CdS x Se 1– x thin films are studied as a function of bath composition. X‐ray diffraction (XRD) study reveals that the CdS x Se 1– x films are nanocrystalline in nature having hexagonal crystal structure. The morphology studies show that the films are transformed from nanogranular to interconnected net‐like structures as a function of bath composition. The deposited CdS x Se 1– x thin films are tested for photoelectrochemical (PEC) application and CSSe 0.4 sample shows the highest power conversion efficiency (PCE) of 0.55%. Furthermore, Al/CSSe 0.4 /FTO thin‐film device shows excellent nonvolatile memory properties in the visible light illumination with 10 000 endurance cycles and can retain the data up to 1000 s with good memory window and uniformity in the resistive switching process. It is noteworthy that, the CdS x Se 1– x is a versatile and functional material for optoelectronics.

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