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Fundamental Characteristics of Cyanide‐Related Multielement Molecular Ion‐Implanted Epitaxial Si Wafers for High‐Performance CMOS Image Sensors
Author(s) -
Suzuki Akihiro,
Kadono Takeshi,
Hirose Ryo,
Okuyama Ryosuke,
Masada Ayumi,
Shigematsu Satoshi,
Kobayashi Koji,
Koga Yoshihiro,
Kurita Kazunari
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201970058
Subject(s) - wafer , cyanide , materials science , epitaxy , stacking , optoelectronics , cmos , getter , nanotechnology , chemistry , layer (electronics) , metallurgy , organic chemistry
To improve the performance of CMOS image sensors, the authors currently develop a cyanide‐related multielement molecular (CH 4 N) ion‐implanted epitaxial Si wafer. The CH 4 N ion‐implanted epitaxial Si wafer has two kinds of defects; C agglomeration defects and stacking faults. These defects contribute to high metal gettering capability and retention capability for H, C, and N. More details can be found in article number 1900172 by Akihiro Suzuki, Kazunari Kurita, and co‐workers.