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Rare Earth Doping of Topological Insulators: A Brief Review of Thin Film and Heterostructure Systems (Phys. Status Solidi A 8∕2019)
Author(s) -
Hesjedal Thorsten
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201970030
Subject(s) - topological insulator , heterojunction , doping , materials science , rare earth , condensed matter physics , courtesy , ferromagnetism , thin film , topology (electrical circuits) , optoelectronics , physics , nanotechnology , electrical engineering , engineering , metallurgy , political science , law
Topological Insulators Long‐range ferromagnetic ordering in rare‐earth doped topological insulators are achieved for first the first time. Proximity coupling and interfacial effects, multiplied in artificial heterostructures, are used to engineer the electronic and magnetic properties of a Dy:Bi 2 Te 3 /Cr:Sb 2 Te 3 thin film heterostructure, introducing long‐range magnetic order in high‐moment Dy:Bi 2 Te 3 . More details can be found in article number 1800726 by Thorsten Hesjedal. TEM images courtesy of Dr. Vlado Lazarov (University of York).