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Silicon MOS Optoelectronic Micro‐Nano Structure Based on Reverse‐Biased PN Junction (Phys. Status Solidi A 7∕2019)
Author(s) -
Xu Kaikai
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201970029
Subject(s) - optoelectronics , diode , materials science , offset (computer science) , modulation (music) , fabrication , cmos , silicon , light emitting diode , physics , computer science , medicine , alternative medicine , pathology , acoustics , programming language
Optoelectronic Devices Si gate‐controlled diode light‐emitting device: Since the MOSlike diode utilizes the field effect induced by the gate for modulation of diode's space charge electric field and hence the optical output from the light emitting diode, the modulation speed for visible and infrared bands can attain higher frequencies with a significant offset. The fabrication of the device is fully compatible with CMOS processing procedures. More details can be found in article number 1800868 by Kaikai Xu.