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Ion‐Implant Isolated Vertical GaN p‐n Diodes Fabricated with Epitaxial Lift‐Off From GaN Substrates (Phys. Status Solidi A 4∕2019)
Author(s) -
Wang Jingshan,
McCarthy Robert,
Youtsey Chris,
Reddy Rekha,
Xie Jinqiao,
Beam Edward,
Guido Louis,
Cao Lina,
Fay Patrick
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201970019
Subject(s) - epitaxy , materials science , optoelectronics , diode , lift (data mining) , ion , nanotechnology , chemistry , computer science , layer (electronics) , organic chemistry , data mining
Ion‐Implant Isolation Vertical GaN p‐n diodes fabricated using band‐gap selective photoelectrochemical wet epitaxial lift‐off processing enables homoepitaxial growth for low‐defect‐density devices. Nearly identical performance to control devices on GaN substrates and no indication of material quality degradation is found. This technique provides a possible route to achieve flexible thin‐film power electronics with high performance and low cost. More details can be found in article number 1800652 by Jingshan Wang, Patrick Fay, and co‐workers.