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Abnormal Grain Growth in AlScN Thin Films Induced by Complexion Formation at Crystallite Interfaces (Phys. Status Solidi A 2∕2019)
Author(s) -
Sandu Cosmin Silviu,
Parsapour Fazel,
Mertin Stefan,
Pashchenko Vladimir,
Matloub Ramin,
LaGrange Thomas,
Heinz Bernd,
Muralt Paul
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201970015
Subject(s) - nucleation , wurtzite crystal structure , crystallite , materials science , grain boundary , thin film , crystallography , characterization (materials science) , condensed matter physics , composite material , nanotechnology , chemistry , metallurgy , microstructure , physics , zinc , organic chemistry
Thin Films Characterization with hyper‐map STEM‐EDX and automated crystal orientation mapping prove that the growth and proliferation of abnormally oriented grains in (0001)‐oriented AlScN films initiate by the segregation of Sc atoms (red in the map) to grain boundaries, forming a Sc rich complexion layer. Secondary nucleation from the latter leads to the growth of heavily tilted, faster growing wurtzite grains. More details can be found in article number 1800569 by Cosmin Silviu Sandu, Paul Muralt and co‐workers.