Premium
Status and Prospects of AlN Templates on Sapphire for Ultraviolet Light‐Emitting Diodes
Author(s) -
Hagedorn Sylvia,
Walde Sebastian,
Knauer Arne,
Susilo Norman,
Pacak Daniel,
Cancellara Leonardo,
Netzel Carsten,
Mogilatenko Anna,
Hartmann Carsten,
Wernicke Tim,
Kneissl Michael,
Weyers Markus
Publication year - 2020
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201901022
Subject(s) - sapphire , materials science , template , light emitting diode , optoelectronics , ultraviolet , diode , annealing (glass) , dislocation , wide bandgap semiconductor , nanotechnology , optics , laser , metallurgy , composite material , physics
Herein, the scope is to provide an overview on the current status of AlN/sapphire templates for ultraviolet B (UVB) and ultraviolet C (UVC) light‐emitting diodes (LEDs) with focus on the work done previously. Furthermore, approaches to improve the properties of such AlN/sapphire templates by the combination of high‐temperature annealing (HTA) and patterned AlN/sapphire interfaces are discussed. While the beneficial effect of HTA is demonstrated for UVC LEDs, the growth of relaxed AlGaN buffer layers on HTA AlN is a challenge. To achieve relaxed AlGaN with a low dislocation density, the applicability of HTA for AlGaN is investigated.