Status and Prospects of AlN Templates on Sapphire for Ultraviolet Light‐Emitting Diodes | Zendy

Hagedorn Sylvia | Zendy; Walde Sebastian | Zendy; Knauer Arne | Zendy; Susilo Norman | Zendy; Pacak Daniel | Zendy; Cancellara Leonardo | Zendy; Netzel Carsten | Zendy; Mogilatenko Anna | Zendy; Hartmann Carsten | Zendy; Wernicke Tim | Zendy; Kneissl Michael | Zendy; Weyers Markus | Zendy

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Status and Prospects of AlN Templates on Sapphire for Ultraviolet Light‐Emitting Diodes

Author(s) -

Hagedorn Sylvia,

Walde Sebastian,

Knauer Arne,

Susilo Norman,

Pacak Daniel,

Cancellara Leonardo,

Netzel Carsten,

Mogilatenko Anna,

Hartmann Carsten,

Wernicke Tim,

Kneissl Michael,

Weyers Markus

Publication year - 2020

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.201901022

Subject(s) - sapphire , materials science , template , light emitting diode , optoelectronics , ultraviolet , diode , annealing (glass) , wide bandgap semiconductor , dislocation , nanotechnology , optics , laser , metallurgy , composite material , physics

Herein, the scope is to provide an overview on the current status of AlN/sapphire templates for ultraviolet B (UVB) and ultraviolet C (UVC) light‐emitting diodes (LEDs) with focus on the work done previously. Furthermore, approaches to improve the properties of such AlN/sapphire templates by the combination of high‐temperature annealing (HTA) and patterned AlN/sapphire interfaces are discussed. While the beneficial effect of HTA is demonstrated for UVC LEDs, the growth of relaxed AlGaN buffer layers on HTA AlN is a challenge. To achieve relaxed AlGaN with a low dislocation density, the applicability of HTA for AlGaN is investigated.

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