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Extraction and Analysis of the Characteristic Parameters in Back‐to‐Back Connected Asymmetric Schottky Diode
Author(s) -
Wang Zuo,
Zang Wanyu,
Shi Yeming,
Zhu Xingyu,
Rao Gaofeng,
Wang Yang,
Chu Junwei,
Gong Chuanhui,
Gao Xiuying,
Sun Hui,
Huanglong Sibo,
Yang Dingyu,
Wangyang Peihua
Publication year - 2020
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201901018
Subject(s) - schottky diode , thermionic emission , extraction (chemistry) , schottky barrier , metal–semiconductor junction , materials science , voltage , diode , optoelectronics , biological system , computer science , electrical engineering , physics , chemistry , engineering , chromatography , quantum mechanics , biology , electron
The physical Schottky parameters of devices based on Schottky contact are important to analyze the working mechanism. This article theoretically studies the parameter characteristics of the current–voltage curve of two back‐to‐back connected Schottky contacts via the thermionic emission model, and it is found that not all the parameters are able to be extracted under some constraints. Compared with some classical extraction methods, a straightforward strategy to approach the Schottky intrinsic parameters by solving equations during the characteristic interval are presented. In addition, this method is verified on several representative standard curves and experimental curves, and the extracted parameters are highly compatible with those curves. The current extraction method will be of great significance for the design and preparation of Schottky‐based devices.