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On the Interpretation of Hysteresis Loop for Electronic and Ionic Currents in Organic Memristive Devices
Author(s) -
Battistoni Silvia,
Verna Alessio,
Marasso Simone Luigi,
Cocuzza Matteo,
Erokhin Victor
Publication year - 2020
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201900985
Subject(s) - neuromorphic engineering , bottleneck , memristor , materials science , nanotechnology , hysteresis , computation , computer science , stability (learning theory) , fabrication , resistive random access memory , electronic engineering , optoelectronics , artificial neural network , voltage , electrical engineering , artificial intelligence , physics , engineering , condensed matter physics , algorithm , embedded system , medicine , alternative medicine , pathology , machine learning
Being promising elements for neuromorphic computation, memristive devices have been often described as crucial elements for mimicking important synapse properties, such as memory and learning. Among them, organic memristive devices (OMDs) can claim low‐cost fabrication processes and the easy tunability of their electrical properties. Up to now, the major bottleneck for their larger uses in neuromorphic computation is low rate of the resistance switching and stability. Herein, a new approach is reported, based on the use of a liquid electrolyte, leading to the manufacturing of OMD with higher stability and faster resistive switching.