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Enhanced Electrical Performance of Structurally Engineered Memristor Devices with Multi‐Stacked Indium Zinc Oxide Films
Author(s) -
Shan Fei,
Guo Hong-Bo,
Kim Han-Sang,
Lee Jae-Yun,
Sun Hao-Zhou,
Gon Choi Seong,
Koh Jung-Hyuk,
Kim Sung-Jin
Publication year - 2020
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201900967
Subject(s) - memristor , materials science , optoelectronics , amorphous solid , indium , resistive random access memory , oxide , nanotechnology , non volatile memory , thin film , annealing (glass) , layer (electronics) , indium tin oxide , voltage , electronic engineering , composite material , electrical engineering , metallurgy , chemistry , organic chemistry , engineering
A structurally engineered memristor architecture based on metal‐oxide materials has lasting significance for the nonvolatile and high storing velocity of next‐generation nonvolatile memories. A memristor device based on multi‐stacked indium zinc oxide (IZO) structure is fabricated using a solution process. An Al/three‐multi‐stacked IZO/TiO 2 /Al memristor device is fabricated with an In/Zn solution molar ratio of 7:3 with a repetitious spin‐coating and annealing process. The amorphous TiO 2 layer is prepared by atomic layer deposition with a low deposition temperature of 200 °C. The layers of IZO thin films in the memristor are raised from a single layer to three layers for intentional control of the concentration of oxygen vacancies, which play an important role in improving the electrical performance of memristor devices. The memristor exhibits uniform and reproducible resistance switching behavior with low‐resistance state (LRS) and high‐resistance state (HRS) voltage sweeps and shows excellent retention performance. The resistive switching phenomenon for an Al/multi‐stacked IZO/TiO 2 /Al memristor device is explained from an analysis of the current–voltage characteristics and the impact of various IZO layers. This study also suggests that some other appropriate metal oxide thin films with good resistive‐switching performance can be used to prepare structurally enhanced memristor devices.