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A Study on the Interfacial Structure Design of Self‐Compliance Ni/HfO x /Ni Bipolar Selectors and Trap‐to‐Trap Tunneling Mechanism Caused by Redox Reaction
Author(s) -
Wang Liyuan,
Cao Lili,
Miao Min,
Zhang Hao,
Luo Bingwei
Publication year - 2020
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201900934
Subject(s) - resistive random access memory , quantum tunnelling , non blocking i/o , materials science , optoelectronics , trap (plumbing) , nanotechnology , oxide , voltage , electrical engineering , chemistry , engineering , catalysis , metallurgy , biochemistry , environmental engineering
Selectors are considered some of the most significant devices applied to the integration of resistive random access memory (RRAM). Self‐compliance selectors promote the stability of one selector and one resistor (1S1R) cell to reduce additional compliance current circuits without compromising RRAM switching performance. Herein, a Ni/HfO x /Ni bipolar selector with special cluster microstructures is fabricated via a facial magnetron sputtering technology, which has self‐compliance (±12 μA) performance and ultrahigh voltage endurance (±10 V). To investigate the mechanism, theoretical models for the self‐compliance selectors are proposed. The results demonstrate that traps and special interfaces are formed through redox reactions. Resistive switching properties are caused by the trap‐to‐trap tunneling structure of the HfO x –NiO y layers. At the interfaces of HfO x –NiO y oxide layers, the tunneling current reaches a saturation state, leading to the self‐compliance phenomenon, which provides a theoretical and research foundation for the development of RRAM technology.