Premium
High Responsivity and Photovoltaic Effect Based on Vertical Transport in Multilayer α‐In 2 Se 3
Author(s) -
Mech Roop K.,
Mohta Neha,
Chatterjee Avijit,
Selvaraja Shankar Kumar,
Muralidharan Rangarajan,
Nath Digbijoy N.
Publication year - 2020
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201900932
Subject(s) - responsivity , materials science , optoelectronics , photodetector , indium tin oxide , specific detectivity , wavelength , optics , indium , physics , thin film , nanotechnology
Herein, device demonstration based on vertical transport in multilayer α‐In 2 Se 3 is reported. Photodetectors realized using a metal/α‐In 2 Se 3 /indium tin oxide (ITO) vertical junction exhibit clear signature of the band edge in spectral responsivity. The wavelength at 680 nm corresponding to an ultrahigh responsivity of 1000 A W −1 and a detectivity of >10 13 cm Hz 0.5 W −1 at a bias of 0.5 V. The variation of responsivity and detectivity with optical power density is studied, and a transient response of 20 ms is obtained for the devices (instrument limitation). In addition, an asymmetric barrier height arising out of ITO and Au contacts to a vertical α‐In 2 Se 3 junction resulted in a photovoltaic effect with V OC ≈0.1 V and I SC ≈0.4 μA under an illumination of 520 nm.