Characterization of Au/As 2 Se 3 Multifunctional Tunneling Devices

Herein, the physical design and characterization of the Au/As 2 Se 3 Schottky barrier that is prepared under a vacuum pressure of 10 −5  mbar are reported. The Schottky diodes are characterized by means of X‐ray diffraction, energy‐dispersive X‐ray spectroscopy, current–voltage characteristics, and conductivity, capacitance, and impedance spectroscopy. It is observed that the Schottky barriers exhibit a biasing‐dependent large rectification ratio with current conduction mechanisms dominated by the electric field‐assisted quantum mechanical tunneling through a barrier height of 0.29 eV and depletion width of 13.3 nm. While the spectral analysis of the alternating current (AC) conductivity reveals mixed conduction with the contribution of both of the tunneling and correlated barriers hopping mechanisms, the capacitance spectra display resonance–antiresonance phenomena at 0.201 GHz. A wide range (0.21–1.80 GHz) of negative capacitance (NC) effects is observed in devices. In addition, the impedance spectroscopy analyses show that the Au/As 2 Se 3 devices exhibit band‐stop features with a notch frequency of 1.14 GHz and return loss value of 16 dB. The NC effect, resonance–antiresonance, filtering features, as well as the high rectification ratio at a relatively low biasing voltage (≈0.30 V) nominate the Au/As 2 Se 3 devices for applications which require noise reduction, parasitic effect cancellations, and microwave filtering.