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Metalorganic Chemical Vapor Deposition Heteroepitaxial β‐Ga 2 O 3 and Black Phosphorus Pn Heterojunction for Solar‐Blind Ultraviolet and Infrared Dual‐Band Photodetector
Author(s) -
He Tao,
Li Chang,
Zhang Xiaodong,
Ma Yongjian,
Cao Xu,
Shi Xinyao,
Sun Chi,
Li Junshuai,
Song Liang,
Zeng Chunhong,
Zhang Kai,
Zhang Xinping,
Zhang Baoshun
Publication year - 2020
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201900861
Subject(s) - heterojunction , photodetector , optoelectronics , ultraviolet , chemical vapor deposition , materials science , responsivity , photoelectric effect , infrared , band gap , metalorganic vapour phase epitaxy , optics , epitaxy , nanotechnology , physics , layer (electronics)
Recently, β‐Ga 2 O 3 and black phosphorus (BP) have attracted enormous attention as the solar‐blind ultraviolet (UV) and infrared (IR) photosensitive materials for next‐generation optoelectronic devices, respectively, due to their special bandgap and electrical characteristics. Many β‐Ga 2 O 3 ‐based UV photodetectors and BP‐based IR photodetectors have been investigated separately, but there is no report on the heterojunction and photoelectric devices formed by these two excellent materials. Herein, metalorganic chemical vapor deposition (MOCVD) heteroepitaxial β‐Ga 2 O 3 and BP pn heterojunction for solar‐blind UV and IR dual‐band photodetector is proposed and demonstrated for the first time. The device demonstrates a remarkable photoresponse under UV and IR irradiations with a responsivity of 88.5 and 1.24 mA W −1 , respectively, clear pn heterojunction characteristics, as well as an excellent photoswitch periodicity. Moreover, under different irradiation conditions, the photoelectric properties of β‐Ga 2 O 3 /BP pn heterojunction, including their photogeneration and photoresponse, are investigated in detail. These results signify that β‐Ga 2 O 3 /BP pn heterojunction may find potential applications in future UV/IR dual‐band detection systems.