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An Initial Study of Ultraviolet C Optical Losses for Monolithically Integrated AlGaN Heterojunction Optoelectronic Devices
Author(s) -
Floyd Richard,
Hussain Kamal,
Mamun Abdullah,
Gaevski Mikhail,
Simin Grigory,
Chandrashekhar MVS,
Khan Asif
Publication year - 2020
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201900801
Subject(s) - materials science , optoelectronics , attenuation coefficient , planar , attenuation , heterojunction , sapphire , absorption (acoustics) , optics , diode , common emitter , rayleigh scattering , waveguide , laser , physics , computer graphics (images) , computer science , composite material
An initial study of losses in n‐Al x Ga 1− x N planar waveguides at λ emission ≈ 280 nm using monolithically integrated Al x Ga 1− x N multiple quantum wells (MQWs)‐based light‐emitting diodes and detectors is presented. The epilayer structure for the integrated devices is grown on an AlN (3.5 μm thick) template over sapphire substrates. Emitter–detector optical coupling and the directional independence of radiation within the epistructure are experimentally established. A model for estimating the attenuation coefficient under these conditions is developed. The attenuation coefficient for a planar n‐Al 0.65 Ga 0.35 N waveguide is measured to be 5–6 cm −1 , and it primarily arises from the free‐carrier absorption rather than surface roughness‐dependent Rayleigh scattering.