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Cu 2 O Heterostructured GaN Thin Film and GaN Nanowire Piezoelectric Nanogenerators
Author(s) -
Waseem Aadil,
Johar Muhammad Ali,
Hassan Mostafa Afifi,
Bagal Indrajit V.,
Ha Jun-Seok,
Lee June Key,
Ryu Sang-Wan
Publication year - 2020
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201900798
Subject(s) - materials science , metalorganic vapour phase epitaxy , nanowire , piezoelectricity , optoelectronics , sputtering , nanogenerator , chemical vapor deposition , wide bandgap semiconductor , fabrication , gallium nitride , thin film , layer (electronics) , nanotechnology , epitaxy , composite material , medicine , alternative medicine , pathology
Herein, a c ‐plane GaN thin film (TF) and c ‐axis GaN nanowires are grown using metal‐organic chemical vapor deposition (MOCVD) and then utilized in the fabrication of piezoelectric nanogenerators (PENGs). The piezoelectric performance of GaN‐based PENGs is tuned by sputtering a resistive layer of Cu 2 O on GaN TFs and nanowires. A significant enhancement in the piezoelectric output of a Cu 2 O‐coated GaN TF‐based PENG is observed compared with that of a pristine GaN TF‐based PENG. The enhanced output is attributed to the high resistivity of Cu 2 O, which is controlled by conducting Cu 2 O sputtering in “0” sccm oxygen flow. Furthermore, a GaN/Cu 2 O core–shell nanowire‐based PENG is fabricated to enhance the flexibility and stability of nanogenerators.