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Analysis of Process‐Dependent Electrical Properties of Silicon Heterojunction Solar Cells by Quantum Efficiency and Temperature‐Dependent Current Density–Voltage Measurements
Author(s) -
Mudgal Sapna,
Singh Sonpal,
Komarala Vamsi Krishna
Publication year - 2020
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201900782
Subject(s) - materials science , heterojunction , optoelectronics , band offset , quantum efficiency , silicon , solar cell , wafer , passivation , quantum tunnelling , amorphous silicon , band gap , carrier lifetime , current density , crystalline silicon , nanotechnology , physics , valence band , layer (electronics) , quantum mechanics
Amorphous silicon–crystalline silicon (a‐Si:H/c‐Si) heterojunction solar cells are fabricated by infrared (IR) radiative or resistive preheating of silicon wafers before the a‐Si:H layers deposition. The cells with IR radiative or resistive preheating lead to without S‐shape (WoS) or with S‐shape (WS) in their light current density–voltage ( J–V ) characteristics, respectively. The Suns‐ V oc analysis shows no front/back metal contact barriers for minority carriers in both cells. The light‐ and voltage‐bias‐dependent quantum efficiencies of the WS cell show the hindrance of carrier collection at the a‐Si:H/c‐Si interface due to the band offset, whereas more defective a‐Si:H layers are observed in the WoS cell. The WS and WoS cells' temperature‐dependent dark J – V characteristics reveal that the carrier transport is through tunnel‐assisted recombination and tunneling, respectively. The IR preheating of wafers results in the reduction of the bandgap of a‐Si:H and facilitates for minimizing the band offset at the interface, whereas, the resistive heating shows the relatively better a‐Si:H/c‐Si interface passivation.