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Broadband Ultraviolet Emission from 2D Arrays of AlGaN Microstructures Grown on the Patterned AlN Templates
Author(s) -
Kataoka Ken,
Funato Mitsuru,
Kawakami Yoichi
Publication year - 2020
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201900764
Subject(s) - template , materials science , sapphire , ultraviolet , optoelectronics , microstructure , metalorganic vapour phase epitaxy , quantum well , broadband , trench , wavelength , photoluminescence , epitaxy , layer (electronics) , nanotechnology , optics , composite material , laser , physics
Broadband ultraviolet (UV) emission is achieved using AlGaN microstructure 2D arrays. 2D arrays of trenches are initially formed on AlN templates on sapphire (0001) substrates. AlGaN‐based quantum wells (QWs) are subsequently regrown on top of the patterned templates. Bunched steps are formed within the trench, inducing variations in the Al composition and AlGaN thickness in the QWs. Regions with and without bunched steps coexist and cause emission wavelength variations. The formation mechanism of bunched steps is attributed to the position‐dependent AlN growth rate due to variations of the source–precursor flow within narrow trenches.