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The Influence of AlN Nucleation Layer on Radio Frequency Transmission Loss of AlN‐on‐Si Heterostructure
Author(s) -
Chang Shane,
Zhao Ming,
Spampinato Valentina,
Franquet Alexis,
Do Thi-Hien,
Uedono Akira,
Luong Tien Tung,
Wang Tsang-Hsuan,
Chang Li
Publication year - 2020
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201900755
Subject(s) - materials science , nucleation , optoelectronics , radio frequency , heterojunction , chemical vapor deposition , layer (electronics) , epitaxy , nanotechnology , chemistry , computer science , telecommunications , organic chemistry
Reducing radio frequency (RF) transmission loss is a key requirement when fabricating GaN‐on‐Si RF devices. To get a better insight into the RF loss mechanism in the GaN‐on‐Si structure, the RF loss of an AlN/Si template is investigated by varying the growth temperature of AlN during a metalorganic chemical vapor deposition process. The results show that the RF loss of the AlN/Si template is dominated by the interface loss due to the p‐type conductive channel at the AlN/Si interface, which is induced by the thermal diffusion of Al during the high‐temperature growth. Although a low growth temperature of the AlN nucleation layer can suppress the RF loss in the AlN/Si template, it results in a low crystalline quality of AlN for practical use. Optimizing the growth temperature of the AlN nucleation layer is essential to obtain a good balance between the crystalline quality, morphological quality, and RF loss such that the AlN/Si template is suitable for epitaxial growth of the complete GaN‐on‐Si RF device structure.