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Comparison of MoS 2 /p‐GaN Heterostructures Fabricated via Direct Chemical Vapor Deposition and Transfer Method
Author(s) -
Lee Juhun,
Jang Hyunwoo,
Kwak Taemyung,
Choi Uiho,
So Byeongchan,
Nam Okhyun
Publication year - 2020
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201900722
Subject(s) - heterojunction , chemical vapor deposition , materials science , molybdenum disulfide , sapphire , optoelectronics , substrate (aquarium) , metalorganic vapour phase epitaxy , nanotechnology , layer (electronics) , epitaxy , composite material , optics , laser , oceanography , physics , geology
Herein, the fabrication of MoS 2 /p‐GaN heterostructures via direct chemical vapor deposition (CVD) and transfer methods are demonstrated. The molybdenum disulfide (MoS 2 ) layers are grown on p‐GaN and sapphire substrates via CVD under the same growth conditions. Subsequently, in the case of sapphire substrate, MoS 2 from the sapphire substrate is transferred onto the p‐GaN substrates to produce a vertically stacked heterostructure. Atomic force microscopy (AFM) images indicate that the MoS 2 that is directly grown on the GaN substrate exhibits granular structure, whereas the transferred MoS 2 exhibits triangle‐shaped grains. In the current–voltage measurement of the heterostructures, similar I – V curves are obtained for the direct CVD and transfer methods. However, the results indicate higher current in the transfer‐produced heterostructure than in the CVD‐produced heterostructure. The difference in resistance in both heterostructures is attributed to the density of the grain boundary of MoS 2 . The results suggest that the type of substrate is crucial and the quality of the MoS 2 layers depends on them.