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Ferroelectric Polarization Switching Behavior of Hf 0.5 Zr 0.5 O 2 Gate Dielectrics on Gallium Nitride High‐Electron‐Mobility‐Transistor Heterostructures
Author(s) -
Wu Chunlei,
Ye Hansheng,
Grisafe Benjamin,
Datta Suman,
Fay Patrick
Publication year - 2020
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201900717
Subject(s) - materials science , ferroelectricity , optoelectronics , heterojunction , polarization (electrochemistry) , high electron mobility transistor , dielectric , gallium nitride , transistor , field effect transistor , electron mobility , semiconductor , atomic layer deposition , fermi gas , electron , nanotechnology , layer (electronics) , voltage , chemistry , electrical engineering , physics , quantum mechanics , engineering
Ferroelectric (FE) materials have strong polarization effects and are switchable by the applied electric field, making them attractive candidates for polarization engineering in GaN‐based devices. Herein, the FE response of Hf 0.5 Zr 0.5 O 2 (HZO) deposited by atomic layer deposition (ALD) on AlGaN/GaN high‐electron‐mobility transistor (HEMT) heterostructures is characterized and analyzed in both metal–ferroelectric–semiconductor (MFS) and metal–ferroelectric–oxide–semiconductor (MFOS) configurations. Strong 2D‐electron gas (2DEG) channel modulation from FE polarization switching is observed. Significant FE polarization switching as well as distinct polarization recovery behavior is observed for the first time in GaN transistor structures. The polarization recovery appears to be related to the presence of significant coupling between the FE layer and the 2DEG channel at the AlGaN/GaN heterointerface. These results have significant implications for the design of devices exploiting FE effects in GaN and related materials.