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Deep Submicron Normally Off AlGaN/GaN MOSFET on Silicon with V TH > 5V and On‐Current > 0.5 A mm −1
Author(s) -
Kumar Sandeep,
Vura Sandeep,
Dolmanan Surani Bin,
Tripathy Sudhiranjan,
Muralidharan Rangarajan,
Nath Digbijoy Neelim
Publication year - 2020
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201900709
Subject(s) - materials science , high electron mobility transistor , optoelectronics , breakdown voltage , transistor , threshold voltage , annealing (glass) , gallium nitride , mosfet , dielectric , electrical engineering , voltage , nanotechnology , composite material , layer (electronics) , engineering
A submicron gate normally off AlGaN/GaN high‐electron‐mobility transistor (HEMT) with a high on‐current and high threshold voltage ( V TH ) is demonstrated. The high‐performance device is realized utilizing a gate recess with a length and depth of 200 and 124 nm, respectively. The recess‐etched region has a roughness of 0.7 nm. Various recess‐etch depths and dielectric annealing conditions are used to tune V TH . The optimized device exhibits an on‐current and V TH of 500 mA mm −1 and 5 V, respectively. The measured breakdown characteristics of the devices and their limitations are investigated using 2D‐technology computer‐aided design (TCAD) device simulation. The penetration of the residual electric field in most of the recess region can be the reason for the premature breakdown of deeply scaled recess‐gate e‐mode HEMTs.