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The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor
Author(s) -
Choi Uiho,
Jung Donghyeop,
Lee Kyeongjae,
Kwak Taemyung,
Jang Taehoon,
Nam Yongjun,
So Byeongchan,
Nam Okhyun
Publication year - 2020
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201900694
Subject(s) - materials science , heterojunction , high electron mobility transistor , dislocation , optoelectronics , electron mobility , transistor , composite material , electrical engineering , voltage , engineering
Herein, the effect of crystal quality of AlN buffer layer on AlGaN/GaN/AlN double‐heterostructure high‐electron‐mobility transistor (DH‐HEMT) is investigated. The material quality of the GaN channel and the AlGaN barriers, such as the dislocation density and the interface roughness, deteriorates, and the 2D electron gas (2DEG) mobility decreases as the threading dislocation density (TDD) of the AlN buffer increases. It is also revealed that the thickness and the Al mole fraction of the AlGaN barrier are affected by the strain variation of the GaN channel depending on the TDD of the AlN buffer. The variation of the compressive strain of the GaN channel is responsible for the 2DEG density change by affecting the barrier condition and the piezoelectric polarization charge. Low‐temperature Hall effect measurement reveals that the interface roughness scattering is a dominant factor for the mobility of the DH‐HEMT, which is ≈2–6 × 10 3 cm 2 (V s) −1 .