Electrical Properties of Sn‐Doped α‐Ga 2 O 3  Films on m‐Plane Sapphire Substrates Grown by Mist Chemical Vapor Deposition | Zendy

Akaiwa Kazuaki | Zendy; Ota Katsuya | Zendy; Sekiyama Takahito | Zendy; Abe Tomoki | Zendy; Shinohe Takashi | Zendy; Ichino Kunio | Zendy

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Electrical Properties of Sn‐Doped α‐Ga 2 O 3 Films on m‐Plane Sapphire Substrates Grown by Mist Chemical Vapor Deposition

Author(s) -

Akaiwa Kazuaki,

Ota Katsuya,

Sekiyama Takahito,

Abe Tomoki,

Shinohe Takashi,

Ichino Kunio

Publication year - 2020

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.201900632

Subject(s) - sapphire , chemical vapor deposition , materials science , doping , crystallinity , analytical chemistry (journal) , thin film , optoelectronics , chemistry , nanotechnology , optics , composite material , laser , physics , chromatography

Growth and electrical property of conductive Sn‐doped α‐Ga 2 O 3 films on m‐plane sapphire by mist chemical vapor deposition (mist‐CVD) are exhibited. Although the crystallinity is still inferior in comparison with previously reported α‐Ga 2 O 3 films on c‐plane sapphire, highly crystalline α‐Ga 2 O 3 films on m‐plane sapphire substrates are grown by applying two‐step growth procedure. Carrier concentration of Sn‐doped α‐Ga 2 O 3 films is controlled in the range of 10 17 –10 19 cm −3 by changing the Sn/Ga concentration ratio in source solution. α‐Ga 2 O 3 films on m‐plane sapphires with the thickness of 2 μm show mobilities as high as 65 cm 2 (V s) −1 , which is much higher than previously reported value of 24 cm 2 (V s) −1 in the films grown on c‐plane sapphire.

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