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Indium Phosphide Membrane Nanophotonic Integrated Circuits on Silicon
Author(s) -
Jiao Yuqing,
van der Tol Jos,
Pogoretskii Vadim,
van Engelen Jorn,
Kashi Amir Abbas,
Reniers Sander,
Wang Yi,
Zhao Xinran,
Yao Weiming,
Liu Tianran,
Pagliano Francesco,
Fiore Andrea,
Zhang Xuebing,
Cao Zizheng,
Kumar Rakesh Ranjan,
Tsang Hon Ki,
van Veldhoven Rene,
de Vries Tjibbe,
Geluk Erik-Jan,
Bolk Jeroen,
Ambrosius Huub,
Smit Meint,
Williams Kevin
Publication year - 2020
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201900606
Subject(s) - indium phosphide , optoelectronics , nanophotonics , photonics , materials science , photodiode , photonic integrated circuit , silicon photonics , ultrashort pulse , silicon , electronic circuit , laser , optics , gallium arsenide , electrical engineering , physics , engineering
Photonic integration in a micrometer‐thick indium phosphide (InP) membrane on silicon (IMOS) offers intrinsic and high‐performance optoelectronic functions together with high‐index‐contrast nanophotonic circuitries. Recently demonstrated devices have shown competitive performances, including high side‐mode‐suppression ratio (SMSR) lasers, ultrafast photodiodes, and significant improvement in critical dimensions. Applications of the IMOS devices and circuits in optical wireless, quantum photonics, and optical cross‐connects have proven their performances and high potential.