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Dual‐Functional Nonvolatile and Volatile Memory in Resistively Switching Indium Tin Oxide/HfO x Devices
Author(s) -
Li Wenxi,
Wang Fang,
Zhang Jingwei,
Li Chuang,
Wei Junqing,
Shen Jiaqiang,
Shan Xin,
Ren Tianling,
Zhao Jinshi,
Song Zhitang,
Zhang Kailiang
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201900555
Subject(s) - non volatile memory , memristor , materials science , heterojunction , optoelectronics , indium tin oxide , oxide , resistive random access memory , dual (grammatical number) , indium , resistive touchscreen , voltage , nanotechnology , electronic engineering , electrical engineering , thin film , art , literature , engineering , metallurgy
Herein, dual‐functional nonvolatile and volatile memory occurrence in memristor based on oxide heterostructures is shown. The chemical composition of material is investigated and electrical measurements are performed to indicate the resistive switching stability under consecutive voltage sweep. The device shows robust nonvolatile memory switching (greater than 10 5 sweep cycles) and self‐compliant volatile threshold switching (approximately 10 5 nonlinearity) functions. Moreover, the underlying mechanism of the phenomenon is investigated to uncover how the two resistive switching modes happen. This work can provide a reference toward the design of dual‐functional memristors based on oxide heterostructures.