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Influence of Nitrogen Adsorption of Doped Ta on Characteristics of SiN x ‐Based Resistive Random Access Memory
Author(s) -
Guo Jingshu,
Gao Haixia,
Jiang Pengfei,
Yang Mei,
Jiang Xinzi,
Zhang Zhenfei,
Ma Xiaohua,
Yang Yintang
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201900540
Subject(s) - resistive random access memory , materials science , doping , dangling bond , tantalum , transmission electron microscopy , tantalum nitride , nitride , x ray photoelectron spectroscopy , resistive touchscreen , analytical chemistry (journal) , layer (electronics) , optoelectronics , nanotechnology , silicon , electrical engineering , nuclear magnetic resonance , chemistry , metallurgy , electrode , physics , engineering , chromatography
The characteristics and conductive mechanism of Ta/SiN x /Ta:SiN x /SiN x /Pt resistive random access memory (RRAM) are investigated. Compared with Pt‐doped devices with the same structure, the Ta‐doped devices produce lower operation current in a high resistance state and a larger on/off radio. Furthermore, reliability tests show that the Ta‐doped RRAM has good data retention ability and endurance. Ta clusters are observed in the Ta‐doped SiN x layer through the transmission electron microscope. Also, the X‐ray photoelectron spectra indicate that additional Si dangling bonds and tantalum nitride are present in the Ta‐doped SiN x film. Based on the structure of the device, material analysis, and electrical characteristics, a model is proposed to explain the influence of the doped Ta on resistive switching behavior of the device.