Premium
Threshold Voltage Instability of Diamond Metal–Oxide–Semiconductor Field‐Effect Transistors Based on 2D Hole Gas
Author(s) -
Yang Mingchao,
Sang Liwen,
Liao Meiyong,
Imura Masataka,
Li Hongdong,
Koide Yasuo
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201900538
Subject(s) - materials science , threshold voltage , gate oxide , optoelectronics , diamond , negative bias temperature instability , transistor , field effect transistor , time dependent gate oxide breakdown , hysteresis , mosfet , oxide , voltage , condensed matter physics , electrical engineering , physics , metallurgy , engineering , composite material
Recent marked advances in diamond metal–oxide–semiconductor field‐effect transistors (MOSFETs) have raised the issue of gate reliability. Herein, the threshold voltage stability of MOSFETs based on hydrogen‐terminated diamond surface conductivity is examined. The electrical output characteristic curves are characterized by cyclic gate sweeping from reverse to forward gate bias (RF) and from forward to reverse gate bias (FR), respectively. The characteristics of drain current versus drain voltage are affected by the gate bias sweeping direction. Marked hysteresis is also observed in the transfer curves for the RF and FR gate sweeping. The different gate sweeping directions induce threshold voltage variation and hole mobility change. The facts that 1) no extra interface states are generated due to gate sweeping and 2) the trapped charge density depends on the gate oxide thickness, reveal that charge trapping occurs at the border of the gate oxide.